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AH212
* 1800 - 2400 MHz * 24.7 dB Gain * +30 dBm P1dB * +46 dBm Output IP3
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Features
Product Description
The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/ RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested.
Functional Diagram
Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out
RF In 3
6 Vcc2 / RF Out 5 N/C
* +5V Single Positive Supply * Internal Active Bias
Vbias2 4
AH212-S8G
Vbias1 1 N/C 2 RF In 3 N/C 4 N/C 5 Vbias2 6 12 Vcc1 11 N/C 10 Vcc2 / RF Out 9 Vcc2 / RF Out 8 N/C 7 N/C
* Lead-free/ RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies
Applications
* Mobile Infrastructure * WiBro Infrastructure * TD-SCDMA
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply.
AH212-EG
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power
@ -45 dBc ACLR
Typical Performance (1)
Units Min
MHz MHz dB dB dB dBm dBm dB dBm mA mA mA V 340 1800 22.2 2140 24.7 25 9 +29.5 +46 6.0 +21 400 85 315 5 500
Typ
Max
2400
Parameters
Frequency Gain (3) Input Return Loss Output Return Loss Output P1dB (3) Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB
Typical
1960 24.6 12.5 10 +30 +48.0 +23.0 +21 5.5 6.0 +5 V @ 400 mA 2140 24.7 25 9 +29.5 +46
+29 +43.5
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc Stage 1 Amp Current, Icc1 Stage 2 Amp Current, Icc2 Device Voltage, Vcc
Noise Figure Supply Bias
3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25C. The AH212-EG in a 4x5 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB.
1. Test conditions unless otherwise noted: 25 C, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Thermal Resistance, Rth Junction Temperature -65 to +150 C +26 dBm +7 V 900 mA 5W 33 C/W +200 C
Ordering Information
Part No.
AH212-S8G AH212-EG AH212-S8PCB1960 AH212-S8PCB2140 AH212-EPCB1960 AH212-EPCB2140
Rating
Description
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/ RoHS-compliant SOIC-8 package)
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/ RoHS-compliant 12-pin 4x5mm DFN package)
1960 MHz Evaluation Board 2140 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces for SOIC-8 package on a 7" reel Standard tape / reel size = 1000 pieces for DFN package on a 7" reel. Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
Page 1 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
S11
1.0
0.8
Typical Device Data (SOIC-8)
6 0.
S22
2. 0
6 0.
35 30 25 Gain (dB) 20
DB(|S(2,1)|) AH212
0. 4
Swp Max 3GHz
1.0
0.8
Gain
Swp Max 3GHz
2. 0
0 3.
0 4.
0.2 5.0 0.2
10.0
10.0
15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3
S(1,1) AH212
-4 .0 -5. 0 -4 .0 -5. 0
2 -0. 2 -0.
-10.0 -10.0
.4 -0
.4 -0
0 2.
-0 .6
-0 .6
-
Swp Min 0.01GHz
S(2,2) AH212
-0.8
-0.8
-
0 2.
Swp Min 0.01GHz
-1.0
Notes: The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44
-130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11
17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51
65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98
-64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27
122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70
-2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34
-1.0
-145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments.
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 12 July 2010
10.0
-3 .0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0. 4
0 3.
0 4.
5.0
10.0
-3 .0
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 1850 MHz Reference Design
Typical RF Performance at 25 C
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
1800 25.4 10.5 15.5 +30.5 +47 5.8
1850 25.1 12 15 +30.5 +47 5.8 +5 V 400 mA
1900 25 12.5 13 +30 +47.5 5.9
Noise Figure (dB) Device / Supply Voltage Quiescent Current
2 DNP 2.7 pF
Notes: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @ 10 deg at 1.85 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
S22 vs. Frequency
28 27 S 2 2 (d B )
+25C -40C +85C
0 -5 -10 -15 -20
+25C -40C +85C
S 2 1 (d B )
26 25 24 23 22 1800
1820
1840 1860 Frequency (MHz)
S11 vs. Frequency
1880
1900
-25 1800
1820
1840
1860
1880
1900
Frequency (MHz)
OIP3 vs. Frequency +85C O IP 3 (d B m ) 55 50
+25 C, +15 dBm/tone
0
+25C -40C
-5 S 1 1 (d B ) -10 -15 -20 -25 1800
45 40 35 1800
1820
1840
1860
1880
1900
1820
Frequency (MHz)
1840 1860 Frequency (MHz)
1880
1900
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 12 July 2010
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Channel Power
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 C
1960 MHz 24.6 dB 12.5 dB 10 dB +30 dBm +48 dBm 23 dBm 5.5 dB +5 V 400 mA
2 DNP 2.7 pF
(+15 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
Notes: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @14 deg at 1.96 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
S11 vs. Frequency S22 vs. Frequency
27 26
S11 (dB)
0
+25C -40C +85C
0 -5 S22 (dB) -10 -15 -20
+25C -40C +85C
-5 -10 -15 -20
S21 (dB)
25 24 23 22 1930
+ 25 C -40 C +85 C
1940
1950 1960 1970 Frequency (MHz)
OIP3 vs. Frequency
+25 C, +15 dBm/tone
1980
1990
-25 1930
1940
1950
1960
1970
1980
1990
-25 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
OIP3 vs. Temperature 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
Frequency (MHz)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
55 50 45 40 35 1930
OIP3 (dBm)
OIP3 (dBm)
1940
1950 1960 1970 Frequency (MHz)
P1dB vs. Frequency
1980
1990
-40
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
13
14 15 16 Output Power (dBm) ACPR vs. Channel Power
17
18
Noise Figure vs. Frequency
7 6
31 30 P1dB (dBm)
Circuit boards are optimized at 1960 MHz
-40 -45 ACPR (dBc) -50 -55 -60 -65 -70
1940 1950 1960 1970 1980 1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
NF (dB)
29 28 27 26 1930
5 4 3
-40C
1940 1950
+25C
1960 1970
+85C
1980 1990
-40C
2 1930
+25C
+85C
-40 C
+25 C
+85 C
18
19
20
21
22
23
24
25
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 12 July 2010
AH212
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications
Typical RF Performance at 25 C
2010 24.6 16 9.5 +30 +47 23 6 +5 V 400 mA 2025 24.3 18 9 +30 46.6 23 6
DNP 2.7 pF 2
Channel Power (dBm)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure (dB) Device / Supply Voltage Quiescent Current
28 27 S 2 1 (d B ) 26 25 24 23 22 2000
S22 vs. Frequency
Note: 1. C7 is placed at silkscreen marker `2' and `3' on tqs evalboard or @17 deg at 2.015 GHz away from pins 6 and 7. 2. All passive components are of size 0603 unless otherwise noted. S11 vs. Frequency S21 vs. Frequency 0 +25C -40C +85C -5
S 1 1 (d B )
+25C -40C +85C
-10 -15 -20 -25 2000
2005
2010 2015 Frequency (MHz)
55 50
2020
2025
2005
2010
2015
2020
2025
ACPR vs. Channel Power
Frequency (MHz)
OIP3 vs. Frequency
+25 C, +15 dBm/tone IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 2010 MHz
0 -5
-35 A C P R (d B c )
O IP 3 (d B m )
S 2 2 (d B )
-10 -15 -20
+25C -40C +85C
-45 -55 -65 -75
45 40 35 2010
-25 2000
2005
2010
2015
2020
2025
Frequency (MHz)
2015 2020 Frequency (MHz)
2025
19
20
21
22
23
24
Output Channel Power (dBm)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 12 July 2010
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Channel Power
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-S8PCB2140)
Typical RF Performance at 25 C
2140 MHz 24.7 dB 25 dB 9 dB +29.5 dBm +46 dBm +21 dBm 6 dB +5 V 400 mA
(+15 dBm / tone, 1 MHz spacing) (@-45 dBc ACLR, W-CDMA, TM64 DPCH)
Noise Figure Device / Supply Voltage Quiescent Current
0 DNP 2.4 pF
Notes: 1. C7 is placed at silkscreen marker `2' on tqs evalboard or @12.2 deg at 2.14 GHz away from pins 6 and 7. DNP C3. 2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency
27 26 S21 (dB) S11 (dB) 25 24 23
+25C -40C +85C
0 -5 -10 S22 (dB) -15 -20 -25 -30 2160 2170 -35 2110 2120 2130 2140 2150 2160 2170
+25C -40C +85C
0 -5 -10 -15 -20
+25C -40C +85C
22 2110
2120
2130
2140
2150
-25 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
OIP3 vs. Frequency 55 50 45 40 35 2110
+25 C, +15 dBm/tone
Frequency (MHz)
OIP3 vs. Temperature 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
Frequency (MHz)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +25 C
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
2120
2130 2140 2150 Frequency (MHz) P1dB vs. Frequency
2160
2170
-40
-15
10 35 Temperature (C)
60
85
12
13
14 15 16 Output Power (dBm)
17
18
Noise Figure vs. Frequency
8 7 6 5 4 ACLR (dBc) NF (dB) -40 -45 -50 -55
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
30 29 P1dB (dBm) 28 27 26 25 2110
Circuit boards are optimized at 2140 MHz
-40C
2120 2130
+25C
2140 2150
+85C
2160 2170
-40C
3 2110 2120 2130 2140
+25C
2150
+85C
-60 2160 2170 18 19
-40 C
20
+25 C
21
+85 C
22
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 12 July 2010
AH212
Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2350 MHz Reference Design for WiBro Applications
Typical RF Performance at 25 C
2300 24.5 10 7.5 +30.4 +45 2350 24.4 10 7 +30 +44.3 +5 V 400 mA
0 DNP 2.2 pF
2400 24.3 10 6.5 +29.6 +43.7
Device / Supply Voltage Quiescent Current
Notes:
1. C7 is placed at the silkscreen marker `1' on tqs evalboard or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7. C3 is placed at silkscreen marker `A' or@ 4.2 degrees at 2.35 GHz away from pin 3. 2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency
26 25 S 2 1 (d B ) S 1 1 (d B ) 24 23 22 21 2300
0 -5 -10 -15 -20 -25 2300 S 2 2 (d B ) 2320 2340 2360 2380 2400
0 -5 -10 -15 -20 -25 2300
2320
2340
2360
2380
2400
2320
2340
2360
2380
2400
Frequency (MHz)
OIP3 vs. Frequency 55 50 O IP 3 (d B m ) 45 40 35 2300
+25 C, +15 dBm/tone
Frequency (MHz)
P1dB vs. Frequency
31 30 P 1 d B (d B m ) 29 28 27 26 2300
Frequency (MHz)
2320
2340 2360 Frequency (MHz)
2380
2400
2320
2340
2360
2380
2400
Frequency (MHz)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 7 of 12 July 2010
AH212
35
1 Watt High Linearity, High Gain InGaP HBT Amplifier
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
S11
1.0
0.8
Typical Device Data (DFN 4x5 mm)
6 0.
S22
2. 0
0 3.
0 4.
0.2 0.2
25 Gain (dB) 20
0
5.0
10.0
10.0
15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3
-4 .0 -5. 0 -4 .0 -5. 0
2 -0. 2 -0.
-10.0 -10.0
.4 -0
.4 -0
-0 .6
0 2.
-0 .6
-
S(1,1) AH212
Swp Min 0.01GHz
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-10.92 -3.48 -0.12 -2.58 -3.56 -8.55 -12.30 -5.21 -4.42 -5.81 -9.68 -22.03 -13.88 -7.86 -5.27 -4.10 -3.60
-112.71 -121.92 -168.99 163.93 147.73 125.39 -155.14 -171.47 164.06 140.51 118.60 121.72 -133.74 -148.71 -164.02 -176.86 174.71
14.75 22.90 27.45 26.41 25.52 28.69 29.61 28.43 26.63 25.16 23.77 22.15 20.27 18.12 16.09 14.35 12.79
95.57 70.25 14.93 -53.73 -62.82 -95.79 -147.37 167.21 132.05 99.97 67.69 34.69 2.51 -28.03 -56.46 -85.23 -117.50
-73.98 -70.46 -67.96 -60.92 -59.17 -54.90 -55.92 -55.39 -56.48 -57.72 -60.00 -60.00 -55.39 -50.75 -48.64 -47.96 -47.13
47.38 9.54 94.09 47.82 67.34 49.69 32.50 23.93 3.83 -6.10 -86.34 -166.62 157.88 130.86 115.31 96.72 90.37
-2.62 -2.87 -2.87 -1.39 -1.19 -1.51 -1.54 -1.50 -1.61 -1.61 -1.58 -1.43 -1.39 -1.27 -1.27 -1.27 -1.24
-1.0
S(2,2) AH212
-0.8
-0.8
-
0 2.
Swp Min 0.01GHz
-143.22 -160.44 -166.36 -168.43 -177.07 179.99 179.91 177.74 175.61 173.57 171.97 169.44 166.52 162.89 159.59 156.84 154.34
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" FR4, four layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor - C7. The markers and vias are spaced in 0.050" increments.
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 8 of 12 July 2010
10.0
-3 .0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0. 4
-3 .0
0. 4
30
DB(|S(2,1)|) AH212
6 0.
Swp Max 3GHz
1.0
0.8
Gain
Swp Max 3GHz
2. 0
0 3.
0 4.
5.0
10.0
AH212
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Channel Power
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-EPCB1960)
Typical RF Performance at 25 C
1960 MHz 27 dB 16 dB 10 dB +30.5 dBm +46.5 dBm +24.5 dBm 5.5 dB +5 V 400 mA
(+15 dBm / tone, 1 MHz spacing)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
30
+25C -40C +85C
0
+25C -40C +85C
0 -5 S 2 2 (d B ) -10 -15 -20
+25C -40C +85C
29 S 2 1 (d B ) 28 27 26 25 1930 S 1 1 (d B )
-5 -10 -15 -20 -25 1930
1940
1950
1960
1970
1980
1990
1940
1950
1960
1970
1980
1990
-25 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Supply Bias vs. Temperature 450 430 O IP 3 (d B m ) O IP 3 (d B m ) 410 390 370 350 -40 -15 10 35 Temperature (C) P1dB vs. Frequency 60 85 55 50 45 40 35 12 13
Frequency (MHz)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25 C
Frequency (MHz)
OIP3 vs. Temperature 55 50 O IP 3 (d B m ) 45 40 35
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
14 15 16 Output Power (dBm) Noise Figure vs. Frequency
17
18
-40
-15
10 35 Temperature (C) ACPR vs. Channel Power
60
85
31 30 P 1 d B (d B m )
Circuit boards are optimized at 1960 MHz
7
-35
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
6
A C P R (d B c ) -40C +25C +85C -75
N F (d B )
29 28 27 26 1930
-40C +25C +85C
5 4 3 2 1900
-45 -55 -65 -40 C +25 C 23 24 +85 C 25 26
1940
1950
1960
1970
1980
1990
1920
1940
1960
1980
2000
18
19
20
21
22
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 9 of 12 July 2010
AH212
eFrequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Channel Power
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-EPCB2140)
Typical RF Performance at 25 C
2140 MHz 25.5 dB 24 dB 9 dB +30.5 dBm +46 dBm +22 dBm 6 dB +5 V 400 mA
(+15 dBm / tone, 1 MHz spacing)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
28 27 S 2 1 (d B ) S 1 1 (d B ) 26 25 24
+25C -40C +85C
0
+25C -40C +85C
0 -5 S 2 2 (d B ) -10 -15 -20
+25C -40C +85C
-5 -10 -15 -20 -25 -30 2110
23 2110
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
-25 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Supply Bias vs. Temperature 450 430 O IP 3 (d B m ) O IP 3 (d B m ) 410 390 370 350 -40 -15 10 35 Temperature (C) P1dB vs. Frequency 60 85 55 50 45 40 35 12 13
Frequency (MHz)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25 C
Frequency (MHz)
OIP3 vs. Temperature 55 50 O IP 3 (d B m ) 45 40 35
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
14 15 16 Output Power (dBm) Noise Figure vs. Frequency
17
18
-40
-15
10 35 Temperature (C) ACLR vs. Channel Power
60
85
31 30 P 1 d B (d B m )
Circuit boards are optimized at 2140 MHz
3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
8 7 6 5 4
-40C +25C +85C A C L R (d B c )
-40 -45 -50 -55 -40 C -60 +25 C 22 +85 C 23 24
29 28 27 26 2110
-40C +25C +85C
N F (d B )
2120
2130
2140
2150
2160
2170
3 2110
2120
2130
2140
2150
2160
2170
18
19
20
21
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 10 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information
This package is lead-free/ RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH212G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Mounting Configuration / Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Functional Pin Layout
Vcc1 1 8 N/C Vbias1 2 RF In 3 7 Vcc2 / RF Out 6 Vcc2 / RF Out 5 N/C
Vbias2 4
Function
Vcc1 Input Output/ Vcc2 Vbias1 Vbias2 GND N/C or GND
Pin No.
1 3 6, 7 2 4 Backside Paddle 5, 8
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 11 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information
This package is lead-free/ RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH212-EG" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
AH212-EG
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
ESD Rating: Value: Test: Standard:
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Functional Pin Layout
Vbias1 1 N/C 2 RF In 3 N/C 4 N/C 5 Vbias2 6 12 Vcc1 11 N/C 10 Vcc2 / RF Out 9 Vcc2 / RF Out 8 N/C 7 N/C
Function
Vcc1 Input Output /Vcc2 Vbias1 Vbias2 GND N/C or GND
Pin No.
12 3 9, 10 1 6 Backside Paddle 2, 4, 5, 7, 8, 11
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 12 of 12 July 2010

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